文档名：散热底板对IGBT模块功率循环老化寿命的影响
摘要：功率半导体模块通常采用减小结壳热阻的方式来降低工作结温,集成Pin-Fin基板代替平板基板是一种有效的选择.两种封装结构的热阻抗特性不同,可能对其失效机理及应用寿命产生影响.针对平板基板和集成Pin-Fin基板两种常见车规级IGBT模块进行了相同热力测试条件(结温差100K,最高结温150℃)下的功率循环试验,结果表明,散热更强的Pin-Fin模块功率循环寿命低于平板模块.失效分析显示,两者失效模式均为键合线脱附,但Pin-Fin模块的键合失效点集中在芯片中心区域,而平板模块的键合失效点则较为分散.基于电-热-力耦合分析方法,建立功率循环试验的有限元仿真模型,结果表明,Pin-Fin模块的芯片温变梯度更大,芯片中心区域键合点温度更高,使芯片中心区域的键合点塑性变形更大,导致其寿命较平板模块更短,与试验结果吻合.
Abstract：Theinsulatedgatebipolartransistor(IGBT)moduleisthecorecomponentofanelectricvehicleconverter.PowercyclinglifetimeisakeyindexforIGBTmodulereliability.Inengineering,thePin-FinbaseplateoftheIGBTmoduleisusedtoreducethermalresistanceandoperatingjunctiontemperaturetoachievereliabilityimprovement.ThispaperevaluatesthereliabilitydifferencesbetweentheflatbaseplatemoduleandthePin-Finbaseplatemodule.Firstly,thepowercyclinglifetimetestiscarriedoutonIGBTmoduleswithdifferentheatdissipationbaseplates.Aftertheexperiment,thesamplesaredissectedandanalyzedtodeterminefailuremode.Secondly,athree-dimensionalfiniteelementanalysismodelofthesamesizeisestablished,andthesimulationcalculationofelectro-thermal-mechanicalmulti-physicalfieldcouplingiscarriedout.Theloadconditionsofthesimulationarethesameasthoseofthepowercyclingtest.Thetemperaturedistribution,thetemperaturechangeprocessofthechipjunction,andtheplasticstrainofthebondingwiresareobtained.Finally,theinfluenceofdifferentheatdissipationbaseplatesonthepowercyclinglifetimeisobtainedbycomparingtheexperimentalandsimulationresults.Theexperimentalresultsshowthatthecollector-emittersaturationvoltageincreaseratioisgreaterthanthethermalresistanceincreaseratiowhenthemodulefailsunderthesecond-levelpowercyclingtestcondition.Thesuddenchangeofsaturationvoltagewasalsoobservedduringthetest,indicatingthatthefailuremodeofthemodulewasbondingwireslift-off.Underthesamethermaltestconditions,thepowercyclinglifetimeoftheflatbaseplatemoduleis9.2%higherthanthatofthePin-Finbaseplatemodule.Thedisassemblyanalysisshowsthatthelift-offbondingwiresofthePin-Finmodulearemainlyconcentratedinthecenterofthechip,whiletheflatbaseplatemoduleisdispersed.ThefiniteelementanalysisshowsthatthetemperaturedifferenceofthePin-Finmoduleislarger,andthetemperaturedistributionismoreuneventhanthatoftheflatbaseplatemodule.Underthesameaveragejunctiontemperaturechange,themaximumplasticdeformationofPin-Finbaseplatemodulebondingwiresishigherthanthatofflatbaseplatemoduleafteralongtimecumulativeeffect,sothatthepowercyclinglifeofPin-Finbaseplatemoduleislowerthanthatofflatbaseplatemodule.Thefollowingconclusionscanbeobtained.(1)Regardingpackagereliability,underthesamejunctiontemperaturefluctuationandmaximumjunctiontemperature,comparedwiththetraditionalbaseplatemodule,thesurfacetemperaturedistributionofPin-Finbaseplatemodulechipsismoreuneven,themaximumtemperatureofchipsishigher,andtheplasticdeformationofcenterbondingwiresislarger,resultinginashorterpowercyclinglifetime.(2)Regardingapplicationreliability,underthesameoutputcurrent,theservicelifetimeofthePin-Finbaseplatemoduleishigherthanthatoftheflatbaseplatemoduleduetoitslowerthermalresistanceandlowerfluctuationofitsmaximumjunctiontemperature.(3)Tomeetmultipleapplicationrequirements,themoduledesignneedstoconsiderthecurrentcapacityandreliabilitycapabilitycomprehensively.ForthePin-Finbaseplatemodule,measuresshouldbetakentoimproveitsreliabilitywhilereplacingtheheatdissipationbaseplatetoreducethethermalresistanceofthemoduleandachievethesamepowercyclinglife.
作者：常桂钦 罗海辉 方超 陈杰 黄永章 Author：ChangGuiqin LuoHaihui FangChao ChenJie HuangYongzhang
作者单位：新能源电力系统国家重点实验室(华北电力大学)北京102206;株洲中车时代半导体有限公司株洲412000株洲中车时代半导体有限公司株洲412000新能源电力系统国家重点实验室(华北电力大学)北京102206
刊名：电工技术学报
Journal：TransactionsofChinaElectrotechnicalSociety
年，卷(期)：2024, 39(8)
分类号：TM46
关键词：绝缘栅双极型晶体管 散热底板 热阻抗 功率循环寿命 有限元分析
Keywords：Insulatedgatebipolartransistor(IGBT) heatdissipationbaseplate thermalimpedance powercyclinglifetime finiteelementanalysis
机标分类号：TE6TM206TM912.9
在线出版日期：2024年4月29日
基金项目：国家重点研发计划散热底板对IGBT模块功率循环老化寿命的影响[
期刊论文] 电工技术学报--2024, 39(8)常桂钦 罗海辉 方超 陈杰 黄永章功率半导体模块通常采用减小结壳热阻的方式来降低工作结温,集成Pin-Fin基板代替平板基板是一种有效的选择.两种封装结构的热阻抗特性不同,可能对其失效机理及应用寿命产生影响.针对平板基板和集成Pin-Fin基板两种常见车...参考文献和引证文献
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