文档名：基于等效励磁电感的SiC串联器件型中压双有源桥变换器的软开关技术
摘要：基于SiC串联器件的双有源桥变换器因具有开关损耗小、功率密度高、能量控制简单等优势,有望成为中压变换场景中实现高频隔离的优选方案.为保证SiC串联器件的可靠均压,各器件上并联大容值缓冲电容,然而该设计使变换器在传输功率较低时难以实现零电压开通,严重影响变换器的整体效率和串联器件的可靠运行.该文通过构建SiC串联器件型中压双有源桥变换器多模态运行模型并深入分析其运行特性,提出一种基于等效励磁电感的无源软开关技术.所提技术可通过优化外接传输电感位置的方式实现中压侧等效励磁电感参数调节,从而在无额外控制前提下实现SiC串联器件的软开关范围扩展.最后,设计了4kV/1kV实验样机,实现了100kW下运行.实验结果显示,所提出的软开关技术能显著地扩展变换器中SiC串联器件的软开关范围,在保证SiC串联器件均压稳定性的同时能够大幅降低变换器在轻载运行时的功耗.
Abstract：Themediumvoltage(MV)dualactivebridge(DAB)converterwithseries-connectedSiCdevicesofferslowlossandfeasibility,makingitattractiveforhigh-frequency,high-compactnessapplications.However,voltagesharingacrossdevicesposeschallenges.Largesnubbercapacitorsreducevoltageimbalancebutimpedezerovoltageswitching-on(ZVS-on)underlightload,increasinglosses.Previoussoft-switchingtechniquesusingactivemodulationorpassiveisolationtankshavecompleximplementationorredundantcomponents.Therefore,thispaperproposesasoft-switchingtechniqueusingisolationtankparameterdesignandoptimizedexternalinductorpositioningtoextendthesoft-switchingrangeofseriesdeviceswithoutadditionalcomponents.Tofacilitatethistechnique,theT-typeinductancenetworkisequivalencedtoaП-typeinductancenetwork.TheequivalencerevealsthatthetransmissioninductancechangeslittleversustheactualtransmissioninductanceLk,whiletheequivalentmagnetizinginductanceLm1dependsontransmissioninductanceproportionsonbothsides.AlowertransmissioninductanceproportionontheMVsidemakesLm1closertotheactualmagnetizinginductanceLm.Basedonvoltagematchinganddeadtimeassumptions,sixoperationalmodeshavebeenderivedtocalculatethecharacteristicsoftheconverter.ModeboundarycharacteristicsshowthatreducingLm1increasesthesoft-switchingrangeoftheseries-connectedSiCdevices.Regardingthetransmissionpowercharacteristics,maximumtransmissionpowerbarelychangeswithLm1.Forthepeakcurrentcharacteristics,peakcurrentriseswithincreasingtransmissionpower,anditisrecommendedtoavoidimplementingthereferencetransmissionpowerunderhighcurrentpeakvalues.Basedontheanalysisofthecharacteristics,thispaperproposesdesignmethodsforkeyparameters.Firstly,thetransmissioninductanceandvoltagebalancingcapacitorsaredesignedconsideringpowerregulationaccuracy,maximumtransmissionpower,andvoltageimbalancesensitivitySv.Subsequently,Lm1'simpactonseries-connectedSiCdevices'lossisevaluated.Itreducescapacitiveswitching-onlosses,andexcessivelysmallLm1increasesconductionlosses.ConsideringSvanalysis,selectingLm1=1mHincreasesswitching-offcurrentby25A,theoreticallyincreasingSvby30％butreducingMVsidearmlossesbynearly85％atnoload.Thus,sacrificingsomeSvforlight-loadefficiencyisreasonable.Basedona200kWprototype,themagnetizinginductanceisconfigured,andtheexternalinductorLkexisplacedonthelowvoltage(LV)side,obtainingasuitableequivalentmagnetizinginductance.LVexperimentsareconductedonthedesignedprototypetoverifytheefficacyofthepassivesoft-switchingtechnique.PlacingLkexontheLVsideenablesZVS-onoftheseries-connectedSiCdevicesatthesametransmissionpower,whilethereverseconfigurationdoesnot.Subsequently,MVexperimentsareperformedtovalidatetheapplicabilityofthepassivesoft-switchingtechniqueandvoltagebalancingoftheseriesdevicesattheMVlevel.Withanidealinfinitemagnetizinginductance,transmissionpowerwithZVS-onexceeds65kW,andtheproposedsoft-switchingtechniquestillachievesZVS-onat50kW.Meanwhile,themaximumvoltagedifferenceintheseries-connectedSiCdevicesislessthan20V,indicatinggoodvoltagesharing.Finally,theefficiencyisapproximately2％higherthanthemeasuredoneat20％forwardloadandaround4％higherthanthepredictedefficiencyat20％reverseloadwhenLkexisontheLVside,reducinglossesby30％and50％,respectively.Theseresultsdemonstratethatthepassivesoft-switchingstrategyeffectivelyimprovesthelight-loadefficiencyoftheMVDABconverterwithseries-connectedSiCdevices.
作者：陈润田 李楚杉 姚文熙 李武华 何湘宁 Author：ChenRuntian LiChushan YaoWenxi LiWuhua HeXiangning
作者单位：浙江大学电气工程学院杭州310027浙江大学电气工程学院杭州310027;浙江大学伊利诺伊大学厄巴纳香槟校区联合学院海宁314400
刊名：电工技术学报 ISTICEIPKU
Journal：TransactionsofChinaElectrotechnicalSociety
年，卷(期)：2024, 39(12)
分类号：TM46
关键词：电力电子变压器 双有源桥变换器 SiCMOSFET 串联器件 软开关
Keywords：Powerelectronicstransformer dualactivebridgeconverter SiCMOSFET series-connecteddevices soft-switching
机标分类号：TM464TM351TM721
在线出版日期：2024年7月19日
基金项目：国家自然科学基金，宁波市重大专项资助项目基于等效励磁电感的SiC串联器件型中压双有源桥变换器的软开关技术[
期刊论文] 电工技术学报--2024, 39(12)陈润田 李楚杉 姚文熙 李武华 何湘宁基于SiC串联器件的双有源桥变换器因具有开关损耗小、功率密度高、能量控制简单等优势,有望成为中压变换场景中实现高频隔离的优选方案.为保证SiC串联器件的可靠均压,各器件上并联大容值缓冲电容,然而该设计使变换器在传输...参考文献和引证文献
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