文档名：弱光触发下GaAs光电导开关的载流子输运和热失效机制
摘要：弱光触发下高倍增砷化镓光电导开关(GaAsPCSS)内以丝状电流为表现形式的载流子输运机制对其瞬态工作特性和寿命研究有重要意义.该文基于有限元方法构建了GaAsPCSS的物理模型,结合丝状电流的生热机制对1.5μJ弱光触发下开关的瞬态输出电流和晶格温度进行了仿真分析,考察了偏置电场对GaAsPCSS输出特性的影响.通过不同时刻开关内部的瞬态电场、电子浓度和晶格温度等方面研究了高倍增模式下GaAsPCSS的光生载流子输运过程和损伤机理.结果表明,高密度丝状电流的存在伴随于高场畴的产生和发展.开关内部电场越高,负微分效应引起的载流子聚束现象越明显,相应的电子浓度和晶格温度值也越高;在浓度达1017cm-3数量级的等离子体通道中,阳极附近电场强度和晶格温度最大值分别为220kV/cm和821.92K.
Abstract：Galliumarsenidephotoconductivesemiconductorswitch(GaAsPCSS)isoneofthemostpromisingsolid-stateswitcheswithasimplestructure,fastresponsetime,lowjitter,strongopticaltriggerisolation,andeasyintegration,whichhasawiderangeofapplicationsinterahertztechnology,ultra-fastpulsesources,andhighpowermicrowave.GaAsPCSShastwooperatingmodes:linearandhighgain(HG).However,theconductionprocessoftheHGGaAsPCSSisoftenaccompaniedbythehigh-densityfilamentarycurrentunderlowopticalenergy(nJ-μJ),whichgeneratesalotofJouleheattodamagedevice.Inthispaper,atwo-dimensional(2D)electrothermalcouplingmodelofGaAsPCSSissetupbasedontheself-heatingeffect,andthetransientcharacteristicsoftheswitchareinvestigatedattheopticalexcitationof1.5μJ.Firstly,theoutputcurrentsofHGGaAsPCSSunderdifferentbiaselectricfieldsareinvestigated.Theresultsshowthatthecorrespondingoutputcurrentwaveformshaveobvioustrailing(lock-on),andthelockingcurrentsarealmostthesameattheopticalexcitationof1.5μJasthebiaselectricfieldincreasesfrom60kV/cmto78kV/cm.Inaddition,theoutputcurrentamplitudeincreasesandtherisetimedecreasesaccordinglywiththeincreaseofthebiaselectricfield.Secondly,thelatticetemperaturesofHGGaAsPCSSareinvestigatedunderdifferentbiaselectricfields,consideringtheinfluenceofthethermalfieldonthestabilityandphysicalprocessofthedevice.Theresultsshowthattheriseoflatticetemperatureovertimeisdividedintothreestagescombinedwiththecurrentwaveform,namely,thecurrentrisingstage,currentdescendingstageandcurrentlock-onstage.Theriserateoflatticetemperatureisdeterminedbythebiaselectricfieldandtherisestage.Thelatticetemperatureincreaseswiththeincreaseofthebiaselectricfield,andthemaximumlatticetemperaturecanreach821.92Katthebiaselectricfieldof78kV/cm.Finally,thecarriertransportprocessandthermalfailuremechanisminsidetheswitchareinvestigatedbythedistributionoftheelectricfield,carrierconcentration,impactionizationrate,andlatticetemperatureundersingleshotconditions.Att=10ns,thehigh-fieldregionsoftheelectricfield,impactionizationrate,andlatticetemperaturearelocatedneartheelectrodes.Thevaluesnearthecathodearethemaximumduetoelectroninjection,whichare229kV/cm,4.2×1025cm-3·s-1,and408.79K,respectively.Att=50ns,thefilamentarycurrentwithacarrierconcentrationof1017cm-3isformedonthesurfaceofGaAsPCSSthroughtheanodeandthecathode.Thehigh-fieldregionsofelectricfield,impactionizationrate,andlatticetemperaturearelocatedneartheanode,wherethemaximumvaluesare220kV/cm,6.2×1022cm-3·s-1,and821.92K,respectively.Therelationshipbetweentheelectricfield,impactionizationrate,andlatticetemperatureisproven,whichprovidesthepossibilitytopredictthepositionofthermalbreakdown.TherelevantresearchprovidesthetheoreticalguidanceforthestudyofcarriertransportcharacteristicanddamagemechanismofHGGaAsPCSSundertheconditionofhighrepetitionrate.
作者：司鑫阳 徐鸣 王文豪 常家豪 王铖杰Author：SiXinyang XuMing WangWenhao ChangJiahao WangChengjie
作者单位：西安理工大学应用物理系西安710048
刊名：电工技术学报
Journal：TransactionsofChinaElectrotechnicalSociety
年，卷(期)：2024, 39(7)
分类号：O473TM564
关键词：GaAs光电导开关 高倍增模式 丝状电流 输运机制
Keywords：GaAsphotoconductivesemiconductorswitch high-gainmode filamentarycurrent transportmechanism
机标分类号：TN36TN201O441
在线出版日期：2024年4月12日
基金项目：国家自然科学基金，国家自然科学基金，陕西高校青年创新团队项目，陕西省科技计划重点项目，陕西省教育厅青年创新团队建设项目，陕西省教育厅青年创新团队建设项目，陕西省教育厅青年创新团队建设项目弱光触发下GaAs光电导开关的载流子输运和热失效机制[
期刊论文] 电工技术学报--2024, 39(7)司鑫阳 徐鸣 王文豪 常家豪 王铖杰弱光触发下高倍增砷化镓光电导开关(GaAsPCSS)内以丝状电流为表现形式的载流子输运机制对其瞬态工作特性和寿命研究有重要意义.该文基于有限元方法构建了GaAsPCSS的物理模型,结合丝状电流的生热机制对1.5μJ弱光触发...参考文献和引证文献
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