文档名：湿度对功率半导体器件芯片焊料热阻的影响机理
摘要：近年来,湿度对功率器件热特性的影响成已为热点话题.然而,功率器件芯片焊料热阻受湿度的影响尚未被试验证实,且影响机理仍不明确.该文基于试验测试、算例、仿真模型,首次提出湿度对功率器件芯片焊料热阻的影响机理.结果表明,湿度能入侵器件,并在两方面影响器件结-散热器瞬态热阻抗:①芯片焊料;②器件壳表面接触热阻.进一步地,探究芯片焊料的热容、密度、热导率受湿度影响机理,并结合算例可知,若水汽含量占芯片焊料层内物质总量的0.1％,芯片焊料的热容、密度、热导率将变化为原来的101.9％、100.0135％、91.4％.已校准热特性的仿真模型表明,焊料层热容的增大会导致焊料层热阻下降(整体热阻不变),焊料层热导率的减小会导致整个器件热阻上升,两种情况共同作用,影响实际户外应用工况下功率器件的工作寿命.
Abstract：Withthedevelopmentofoffshorewindpower,photovoltaics,andelectricvehicles(practicaloutdoorworkingconditions),theinfluenceofhumidityonpowerelectronics'operationreliabilityhasbeenemphasized.However,theinfluencemechanismofhumidityonpackagingreliabilityisstilluncertain.Someliteraturefoundthatthethermalimpedancemaybeinfluencedbyhumidityandfurtheraffectsthepowercyclinglifetime,butthisphenomenonneedsfurtherverificationandmechanismanalysis.Inthispaper,theexperimentisdesigned,andtheinfluencemechanismofhumidityonthethermalresistanceofpowerelectronicsisproposed.TheresultsindicatethatmoisturecaninvadeDUTandcausetransientthermalimpedanceZthvariationintwoaspects.OnecorrespondstothechipsolderlayerofDUTs,andtheothercorrespondstothecasesurfacecontactresistanceoftheDUTs.Furthermore,itisrevealedthatthethermalcapacity,density,andconductivityareinfluencedbyhumidity,resultinginthermalimpedancevariation.Firstly,theinformationontheDUTs,thebasicprincipleoftransientthermalimpedanceZthmeasurements,thetestplatform,andtheprocessareintroduced.ThispaperusesthreekindsofDUTs(TO-247ofSiCMOSFET,EasyPackofSiCMOSFET,and34mmModuleofSiIGBT).EasyPackmoduleshavenosubstrate,and34mmmoduleshaveasubstrate.TO-247devicesandEasyPackmodulesonlyhaveachipsolderlayer,while34mmmodulesalsohaveasystemsolderlayer,whichcancharacterizethemoistureabsorptioncapacityatdifferentlayers.Forthejunction-heatsinktransientthermalimpedance(Zthjs)measurementofSiIGBTdevices,thegateisfullyturnedonduringthetest.Incontrast,forSiCMOSFETdevices,thegatemustbeturnedontoconducttheloadcurrentandturnedofftoensurethatthemeasurementcurrentsourceentirelypassesthroughthereversebodydiodeandthejunctiontemperatureismeasuredwithVSD(T).DUTsareplacedinaconstanttemperaturehumiditychamber,andthegatedrivercircuitboard,currentsource,andcoolingsystemareplacedoutside.Theexperimentisperformedat85℃/85％RHstoragefor722hourswithtentimesZthjsmeasurements(thetimeintervalbetweentwoZthjsmeasurementsis72h),andthechangebetweentwoadjacentZthjsisobservedtoevaluatetheinfluenceofhumidityonthermalresistance.Then,theexperimentalresultsarediscussed.MoisturecandiffusefromtheenvironmentintotheDUT,furtherleadingtochangesintheDUT'sZthjs.AllTO-247devices,theEasy-4module,andall34mmmodulesindicateachangeinchipsolderlayerthermalresistance.Furthermore,theinfluenceofhumidityontheDUT'sZthjscomesfromthethermalresistanceofthechipsolderinsidethedeviceandthecontactthermalresistanceofthedevicecasesurface.Thecoppersubstrateiscorrodedwhenlong-timesubmergedinahigh-humidityenvironment.Moreover,theinfluencemechanismisproposed.Whenmoistureis1‰ofthesoldercontent,thesolderlayer'sthermalcapacity,density,andconductivitychangeto101.9％,100.0135％,and91.4％oftheoriginalvalues,respectively.Withtheincreaseofthechipsolderlayer'sthermalcapacity,thesolderlayer'sthermalresistanceinZthjsmeasurementsdecreases.Finally,theconclusioncanbedrawn:(1)Moisturecaninvadepowerelectronics,resultinginthermalimpedancevariationforthreekindsofDUTs.(2)Thehumiditycaninfluencethechipsolderlayerwhenthermalresistanceischangedbyhumidityandcasesurfacewhencorrosionoccursincoppermaterial.(3)Thethermalcharacteristicbetweenmoistureandchipsolderlayerisdifferent.Themoistureinvasionleadstoanincreaseinthermalcapacityanddensity,andadecreaseinthermalconductivity,furtherinfluencingthepowerelectronics'operationlifetime.ItisthereasonforRthchangeatthechipsolderlayer.
作者：王延浩 邓二平 王作艺 李道会 黄永章 Author：WangYanhao DengErping WangZuoyi LiDaohui HuangYongzhang
作者单位：新能源电力系统国家重点实验室(华北电力大学)北京102206合肥工业大学电气与自动化工程学院合肥230009上海蔚来汽车有限公司上海201800
刊名：电工技术学报 ISTICEIPKU
Journal：TransactionsofChinaElectrotechnicalSociety
年，卷(期)：2024, 39(12)
分类号：TN306
关键词：湿度 芯片焊料热阻 瞬态热阻抗 寿命 实际户外应用工况
Keywords：Humidity chipsolderlayerthermalresistance transientthermalimpedance lifetime practicaloutdoorworkingconditions
机标分类号：TN303TM46TN432
在线出版日期：2024年7月19日
基金项目：国家自然科学基金，新能源电力系统国家重点实验室自主研究课题资助项目湿度对功率半导体器件芯片焊料热阻的影响机理[
期刊论文] 电工技术学报--2024, 39(12)王延浩 邓二平 王作艺 李道会 黄永章近年来,湿度对功率器件热特性的影响成已为热点话题.然而,功率器件芯片焊料热阻受湿度的影响尚未被试验证实,且影响机理仍不明确.该文基于试验测试、算例、仿真模型,首次提出湿度对功率器件芯片焊料热阻的影响机理.结果表...参考文献和引证文献
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湿度对功率半导体器件芯片焊料热阻的影响机理 The Influence Mechanism of Humidity on the Chip Solder Layer Thermal Resistance of Power Semiconductor Devices
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